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| Advance Product Information November 12, 2004 X-Band Driver Amplifier Key Features * * * * * * * * TGA2700 Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA Chip Dimensions: 1.57 x 1.33 x 0.10 mm (0.062 x 0.052 x 0.004 in) Primary Applications * * X-band Driver Point-to-Point Radio Measured Fixtured Data Product Description 30 Bias Conditions: Vd = 9V, Idq= 300mA 30 25 Gain 10 10 5 0 -5 Input 5 0 -5 -10 -15 -20 -25 -30 7 8 Output The TGA2700-EPU provides typical 30dBm output power at +10 dBm input power @ 300mA and has a small signal gain of 25 dB. The TGA2700-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. Output Power at Pin = 10dBm (dBm) -10 -15 -20 -25 -30 10 11 12 13 9 Frequency (GHz) 34 32 30 28 26 24 22 20 7 8 9 10 11 12 13 Frequency (GHz) Note: This Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Gain (dB) The TriQuint TGA2700-EPU is an X-band Driver Amplifier that operates between 7-13 GHz, The Driver Amplifer is designed using TriQuint's proven standard 0.25 um gate pHEMT production process. 25 20 15 20 15 Advance Product Information November 12, 2004 TGA2700-EPU TABLE I MAXIMUM RATINGS Symbol V I + Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 10 V -5V TO 0V 536 mA 14 mA 20 dBm 2.7 W 150 C 320 C -65 to 150 0C 0 0 Notes 2/ 2/ 2/ 2/, 3/ 4/, 5/ V+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 55 0C, the median life is 1E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ TABLE II DC PROBE TESTS (T A = 25 C, Nominal) Symbol Idss Gm VP B VGS B VGD Param eter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum 75 165 -1.5 -30 -30 M aximum 353 398 -0.5 -8 -12 Value mA mS V V V 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 9 V, Id = 300 mA SYMBOL PARAMETER TEST CONDITION f = 7-13 GHz f = 7-13 GHz f = 7-13 GHz f = 8-13 GHz NOMINAL UNITS Gain IRL ORL Psat TOI Small Signal Gain Input Return Loss Output Return Loss Saturated Output Power 25 12 10 30 dB dB dB dBm Output TOI @ Pin = -5dBm f = 8-12 GHz > 36 dBm PAE Power Added Efficiency f = 12 GHz 27 % TABLE IV THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of package) Test Conditions Vd = 9 V ID = 225 mA Pdiss = 2.0 W Vd = 9 V ID = 300 mA Pdiss = 2.7 W Tbaseplate (oC) 70 TCH (oC) 140 RTJC (qC/W) 34.7 TM (HRS) 2.4 E+6 55 150 1 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 300mA 30 25 20 15 10 Gain 30 25 20 10 5 0 -5 Input 5 0 -5 -10 -15 -20 -25 -30 6 7 8 9 10 11 12 13 14 Output -10 -15 -20 -25 -30 Frequency (GHz) 35 30 25 Pout (dBm) 20 15 10 5 0 6 Pin = -2 dBm Pin = 8 dBm 7 8 Pin = 0 dBm Pin = 10 dBm 9 10 Frequency (GHz) Pin = 2 dBm 11 Pin = 4 dBm 12 13 Pin = 6 dBm Return Loss (dB) 15 Gain (dB) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 300mA 34 Output Power 40 35 30 25 PAE Pout @ Pin = +10dBm (dBm) 31 28 25 22 19 16 13 10 6 7 8 9 10 11 12 13 PAE (%) 20 15 10 5 0 Frequency (GHz) 35 @ 10 GHz 0.55 Output Power Gain Id 30 0.5 0.45 0.4 0.35 0.3 0.25 0.2 Pout (dBm) & Gain (dB) 25 20 15 10 5 0 -2 -1 0 1 2 3 4 Id (A) 5 6 7 8 9 10 Input Power (dBm) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 300mA 30 28 26 24 Gain (dB) 22 -40 deg C 20 18 16 14 12 10 6 7 8 9 10 11 12 13 14 Room Temp. +75 deg C Frequency (GHz) 0 -10 40 30 20 10 0 -10 -20 -30 -40 6 7 -40 Deg C - S11 -40 Deg C - S22 Output Return Loss (dB) Input Return Loss (dB) -20 -30 -40 -50 -60 -70 -80 8 9 10 11 12 13 +75 deg. C - S11 +75 deg. C - S22 14 Frequency (GHz) Room Temp. - S11 Room Temp. - S22 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 300mA 50 45 40 35 IMD3 (dBc) 8 GHz 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 30 25 20 15 10 5 0 9 11 13 15 17 19 21 23 25 Output Power/Tone (dBm) 40 Output TOI @ Pin =-5 dBm 39 38 37 36 35 34 33 32 31 30 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 Frequency (GHz) 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 300mA 40 39 38 Output TOI (dBm) 37 36 35 34 33 32 31 30 29 28 12 14 16 18 20 22 24 26 8 GHz 9 GHz 10 GHz 11 GHz 12 GHz Output Power/tone (dBm) 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 225mA 30 25 20 15 10 Gain 30 25 20 10 5 0 -5 Input 5 0 -5 -10 -15 -20 -25 -30 6 7 8 9 10 11 12 13 14 Output -10 -15 -20 -25 -30 Frequency (GHz) 35 30 25 Pout (dBm) 20 15 10 5 0 6 Pin = -2 dBm Pin = 8 dBm 7 8 Pin = 0 dBm Pin = 10 dBm 9 10 Frequency (GHz) Pin = 2 dBm 11 Pin = 4 dBm 12 13 Pin = 6 dBm Return Loss (dB) 15 Gain (dB) 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 225mA 35 @ 10 GHz 0.4 0.38 Output Power Gain 30 Pout (dBm) & Gain (dB) 0.36 0.34 0.32 0.3 25 20 15 10 5 Id (A) Id 0.28 0.26 0.24 0.22 0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 0.2 Input Power (dBm) 34 40 Output Power Pout @ Pin = +10dBm (dBm) 31 28 25 35 30 PAE (%) 25 PAE 22 19 16 13 10 6 7 8 9 10 11 12 13 20 15 10 5 0 Frequency (GHz) 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 225mA 50 45 40 35 IMD3 (dBc) 8 GHz 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 30 25 20 15 10 5 0 9 11 13 15 17 19 21 23 25 Output Power/Tone (dBm) 36 Output TOI @ Pin =-5 dBm 35 34 33 32 31 30 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 Frequency (GHz) 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Typical Fixtured Performance Bias Conditions: Vd = 9V, Idq = 225mA 37 36 Output TOI (dBm) 35 34 33 32 31 30 12 14 16 18 20 22 24 26 8 GHz 9 GHz 10 GHz 11 GHz 12 GHz Output Power/tone (dBm) 12 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Mechanical Characteristics 8QLWV PLOOLPHWHUV LQFKHV 7KLFNQHVV &KLS HGJH WR ERQG SDG GLPHQVLRQV DUH VKRZQ WR FHQWHU RI ERQG SDG &KLS VL]H WROHUDQFH *1' ,6 %$&.6,'( 2) 00,& %RQG %RQG %RQG %RQG SDG SDG SDG SDG 5) ,Q 9G 5) 2XW 9J [ [ [ [ [ [ [ [ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Recommended Assembly Diagram 9G S) 5) ,1 S) 5) 287 9J X) RKP 9J GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 12, 2004 TGA2700-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 15 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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